Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• : direct writing; dwell time; electron dose; etching; graphene; maskless lithography; nanopatterning; Introduction The discovery of extraordinary and controllable electrical conductivity in graphene back in 2004 made it the most recognized 2D material [1]. The newly discovered phenomena, such as

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

• Tobias Meier,
• Alexander Förste,
• Ali Tavassolizadeh,
• Karsten Rott,
• Dirk Meyners,
• Roland Gröger,
• Günter Reiss,
• Eckhard Quandt,
• Thomas Schimmel and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

• effects; magnetostriction; scanning probe microscopes and components; Introduction Since its invention in the 1980s [1] the atomic force microscope (AFM) became a versatile tool frequently used in nanoscale metrology, biosensing, maskless lithography and high density data storage with nearly as many